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automotive power data sheet rev. 1.0, 2010-10-25 TLE8386-2EL basic smart boost controller
data sheet 2 rev. 1.0, 2010-10-25 TLE8386-2EL table of contents 1 overview . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 block diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 3 pin configuration . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 3.1 pin assignment . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 3.2 pin definitions and functions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 4 general product characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 4.1 absolute maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 4.2 functional range . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 4.3 thermal resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 5 boost regulator . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5.1 description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5.2 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 6 oscillator and synchronization . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 6.1 description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 6.2 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 7 enable function . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 7.1 description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 7.2 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 8 linear regulator . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 8.1 description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 8.2 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 9 protection and diagnostic functions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 9.1 description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 9.2 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 10 application information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 10.1 boost converter application circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 10.1.1 principle: . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 10.1.2 component selection: . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 10.2 further information on TLE8386-2EL . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27 10.2.1 general layout recommendations . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27 10.2.2 additional information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28 11 package outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 29 12 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30 table of contents
pg-ssop-14 type package marking TLE8386-2EL pg-ssop-14 TLE8386-2EL data sheet 3 rev. 1.0, 2010-10-25 basic smart boost controller TLE8386-2EL 1overview features ? wide input voltage range from 4.75 v to 45 v ? constant current or constant voltage regulation ? very low shutdown current: iq< 2a ? flexible switching frequency range, 100 khz to 700 khz ? synchronization with external clock source ? available in a small thermally enhanced pg-ssop-14 package ? internal 5 v low drop out voltage regulator ? output overvoltage protection ? external soft start adjustable by capacitor ? over temperature shutdown ? automotive aec qualified ? green product (rohs) compliant description the TLE8386-2EL is a boost controller with built in protection features. the main function of this device is to step- up (boost) an input voltage to a larger output voltage. the switching frequency is adjustable from 100 khz to 700 khz and can be synchronized to an external cloc k source. the TLE8386-2EL features an enable function reducing the shut-down current consumption to < 2 a. the current mode regulation scheme of this device provides a stable regulation loop ma intained by small external compensati on components. the integrated soft- start feature with external components for adjustment limit s the current peak as well as voltage overshoot at start- up. this ic is suited for use in the ha rsh automotive environments and provides protection functions such as output overvoltage protection and over temperature shutdown.
data sheet 4 rev. 1.0, 2010-10-25 TLE8386-2EL block diagram 2 block diagram figure 1 block diagram en comp in fb freq gnd sst oscillator 14 13 5 8 11 12 3 6 swcs 4 swo 2 ivcc 1 soft start ldo sgnd slope comp. internal supply on/off logic leading edge blanking en_int thermal protection over vol tage protection pwm generator power switch gate driver feedback voltage error amplifier power on reset blockdiagram.vsd switch current error amplifier sync 10 synchroni sation TLE8386-2EL
TLE8386-2EL pin configuration data sheet 5 rev. 1.0, 2010-10-25 3 pin configuration 3.1 pin assignment figure 2 pin configuration 3.2 pin definitions and functions pin symbol function 1ivcc internal ldo output; used for internal biasing and gate drive. do not leave open, bypass with external capacitor. do not connect other circuitry to this pin. 2swo switch output; connect to the gate of external boost converter switching mosfet. 3sgnd current sense ground; ground return for current sense switch, con nect to bottom side of sense resistor. 4swcs current sense input; detects the peak current through switch, connect to high side of sense resistor. 5 sst soft start; connect an external capacitor to adjust the soft start ramp, do not leave open. 6fb feedback; output voltage feedback, connect to output voltage via resistor divider from output capacitor to ground. 7nc not connected; 8comp compensation input; connect r and c network to improve the stability of th e regulation loop. ,1 &203 1& 6<1& )5(4 *1' (1 ,9&& 1& 667 6*1' 6:&6 6:2 slqfrqiljbvvrsvyj )%
data sheet 6 rev. 1.0, 2010-10-25 TLE8386-2EL pin configuration 9nc not connected; 10 sync sync; synchronization input, if feature sync hronization is not used, leave open. 11 freq frequency select input; connect external resistor to gnd to set frequency, do not leave open. 12 gnd ground; connect to system ground. 13 en enable; apply logic high signal to enable device. 14 in supply input; supply for internal biasing, connect to input voltage. exposed pad connect to gnd. pin symbol function
TLE8386-2EL general product characteristics data sheet 7 rev. 1.0, 2010-10-25 4 general product characteristics 4.1 absolute maximum ratings absolute maximum ratings 1) t j = -40 c to +150 c; all voltages with respect to ground, positive current flowing into pin (unless otherwise specified) pos. parameter symbol limit values unit conditions min. max. voltages 4.1.1 in supply input v in -0.3 45 v 4.1.2 en enable input v en -40 45 v 4.1.3 fb; feedback error amplifier input v fb -0.3 5.5 v 4.1.4 -0.3 6.2 v t < 10s 4.1.5 swcs switch current sense input v swcs -0.3 5.5 v 4.1.6 -0.3 6.2 v t < 10s 4.1.7 swo switch gate drive output v swo -0.3 5.5 v 4.1.8 -0.3 6.2 v t < 10s 4.1.9 sgnd current sense switch gnd v sgnd -0.3 0.3 v 4.1.10 comp compensation input v comp -0.3 5.5 v 4.1.11 -0.3 6.2 v t < 10s 4.1.12 freq; frequency input v freq -0.3 5.5 v 4.1.13 -0.3 6.2 v t < 10s 4.1.14 sync; synchronization input v sync -0.3 5.5 v 4.1.15 -0.3 6.2 v t < 10s 4.1.16 sst; softstart setting input v sst -0.3 5.5 v 4.1.17 -0.3 6.2 v t < 10s 4.1.18 ivcc internal linear voltage regulator output v ivcc -0.3 5.5 v 4.1.19 -0.3 6.2 v t < 10s temperatures 4.1.20 junction temperature t j -40 150 c? 4.1.21 storage temperature t stg -55 150 c?
data sheet 8 rev. 1.0, 2010-10-25 TLE8386-2EL general product characteristics note: stresses above the ones listed here may cause perm anent damage to the device. exposure to absolute maximum rating conditions for extended periods may affect device reliability. note: integrated protection functions are designed to prevent ic destruction under fault conditions described in the data sheet. fault conditions are considered as ?outside? normal operating range. protection functions are not designed for continuous repetitive operation. 4.2 functional range note: within the functional range the ic operates as de scribed in the circuit description. the electrical characteristics are specifi ed within the conditions given in the re lated electrical ch aracteristics table. 4.3 thermal resistance note: this thermal data was generated in accordance wit h jedec jesd51 standards. fo r more information, go to www.jedec.org . esd susceptibility 4.1.22 esd resistivity to gnd v esd,hbm -2 2 kv hbm 2) 4.1.23 esd resistivity to gnd v esd,cdm -500 500 v cdm 3) 4.1.24 esd resistivity pin 1, 7, 8, 14 (corner pins) to gnd v esd,cdm,c -750 750 v cdm 3) 1) not subject to production test, specified by design. 2) esd susceptibility, human body model ?hbm? according to eia/jesd 22-a114b 3) esd susceptibility, charged device model ?cdm? eia/jesd22-c101 or esda stm5.3.1 pos. parameter symbol limit values unit conditions min. max. 4.2.1 supply voltage input v in 4.75 45 v v ivcc > v ivcc,rth,d pos. parameter symbol limit values unit conditions min. typ. max. 4.3.1 junction to case 1) 1) not subject to production test, specified by design. r thjc ?10?k/w? 4.3.2 junction to ambient 1) 2) 2) specified r thja value is according to jedec 2s2p (jesd 51-7) + (jesd 51-5) and jedec 1s0p (jesd 51-3) + heatsink area at natural convection on fr4 board; r thja ?47?k/w2s2p 4.3.3 r thja ? 54 ? k/w 1s0p + 600 mm 2 4.3.4 r thja ? 64 ? k/w 1s0p + 300 mm 2 absolute maximum ratings 1) t j = -40 c to +150 c; all voltages with respect to ground, positive current flowing into pin (unless otherwise specified) pos. parameter symbol limit values unit conditions min. max.
TLE8386-2EL boost regulator data sheet 9 rev. 1.0, 2010-10-25 5 boost regulator 5.1 description the tle8386-2 boost (step-up) regulator provides a higher output voltage than input voltage. the pwm controller measures the output voltage via a resistor divider co nnected between pin fb and ground, and determines the appropriate pulse width duty cycle (on time). an over volt age protection swit ches off the converter case if the voltage at pin fb exceeds the over voltage limit. if the connection to the output voltag e resistor divider should be lost, an internal current so urce connected to pin fb will draw the volt age above this limit and shut the external mosfet off. the current mode contro ller has a built-in slope compensation to prevent sub-harmonic oscillations which is a characteristic of current mode controllers oper ating at high duty cycles (>50 % duty). an additional built- in feature is an integrated soft start that limits the current through the inductor and the external power switch during initialization. the soft-start time t ss is adjustable using an external capacitor c sst : the switching frequency may be adjusted by using an external resistor (please refer to chapter oscillator and synchronization ). if synchronization to an external frequency source is used, the internal frequency has to be adjusted close to this external source. figure 3 boost regulator block diagram t ss c sst 200v , 10 a --------------- = comp fb freq oscillator gate driver 8 11 3 6 swcs 4 swo 2 s r q /q d v ovfb,th sgnd logic temp. sensor soft start feedback error amplifier over voltage comparator v ivcc + - current sense ota b oost_diag .vsd sync synchroni zation 10 v ref slope comp. gm ea 5 sst soft start pwm curr comparator
data sheet 10 rev. 1.0, 2010-10-25 TLE8386-2EL boost regulator 5.2 electrical characteristics 1) v in = 6v to 40v; t j = -40 c to +150 c, all voltages with respect to ground, pos itive current flowing into pin; (unless otherwise specified) pos. parameter symbol limit values unit conditions min. typ. max. boost regulator: 5.2.1 feedback reference voltage v fb 2.32. 2.5 2.62 v v in = 19 v; i bo = 100 to 500 ma 5.2.2 voltage line regulation ? v ref / ? v in ? ? 0.15 %/v v in = 6 to 19 v; v bo = 30 v; i bo = 100 ma figure 8 5.2.3 voltage load regulation ? v fb / ? i bo ??5%/a v in = 13v; v bo = 30v; i bo = 100 to 500 ma figure 8 5.2.4 switch peak over current threshold v swcs 120 150 180 mv v in = 6 v v fb < v fbov v comp = 3.5v 5.2.5 current to softstart setting capacitor i sst -8 -10 -16 a 5.2.6 feedback input current i fb -200 na 5.2.7 switch current sense input current i swcs -10 -50 -100 a v swcs = 150 mv 5.2.8 input undervoltage shutdown v in,off 3.75 ? ? v v in decreasing 5.2.9 input voltage startup v in,on ??4.75v v in increasing gate driver for boost switch 5.2.10 gate driver peak sourcing current 1) i swo,src ?-380?ma v swo = 3.5v 5.2.11 gate driver peak sinking current 1) i swo,snk ?550?ma v swo = 1.5v 5.2.12 gate driver output rise time t r,swo ? 3060ns c l,swo = 3.3nf; v swo = 1v to 4v 5.2.13 gate driver output fall time t f,swo ? 2040ns c l,swo = 3.3nf; v swo = 1v to 4v 5.2.14 gate driver output voltage 1) v swo 4.5 ? 5.5 v c l,swo = 3.3nf; 1) not subject to production test, specified by design
TLE8386-2EL boost regulator data sheet 11 rev. 1.0, 2010-10-25 efficiency depending on input voltage v in and output current i bo , %2 >$@ (iilflhqf\>@ (iilflhqf\iru9 ,1 9 , %2 >$@ (iilflhqf\>@ (iilflhqf\iru9 ,1 9 , %2 >$@ (iilflhqf\>@ (iilflhqf\iru9 ,1 9
data sheet 12 rev. 1.0, 2010-10-25 TLE8386-2EL boost regulator load regulation input voltage v in = 6v load regulation input voltage v in = 13.5 load regulation input voltage v in = 19v /rdg5hjxodwlrqyv7hps$,rxw$ 7hps?& /lqh5hj9 /rdg5hjxodwlrqyv7hps$,rxw$ 7hps?& /lqh5hj9 /rdg5hjxodwlrqyv7hps$,rxw$ 7hps?& /lqh5hj9
TLE8386-2EL oscillator and synchronization data sheet 11 rev. 1.0, 2010-10-25 6 oscillator and synchronization 6.1 description r_osc vs. switching frequency the internal oscillator is used to dete rmine the switching frequency of the b oost regulator. the switching frequency can be selected from 100 khz to 700 khz with an external resistor to gnd. to set the switching frequency with an external resistor the following formula can be applied. in addition, the oscillator is capable of changing from the frequency set by th e external resistor to a synchronized frequency from an external clock source. if an external clock source is provided on the pin sync, the internal oscillator should adjusted clos e to this frequency. then it synchronizes to this exte rnal clock frequency and the boost regulator switches at the synchronized frequency. the synchronization frequency capture range is from 250 khz to 700 khz. figure 4 oscillator and synchronization block diagram and simplified application circuit figure 5 synchronization timing diagram clock frequency detector oscillator sync multiplexer pwm logic gate driver swo r freq v clk oscillator _ blkdiag.vsd freq TLE8386-2EL 9 6<1& w w 6<1&75 w 6<1&75 9 6<1&+ 9 6<1&/ 7 6<1& i 6<1& w 6<1&3:+ 9 9 2vfloodwrub7lplqjvyj [] () [] () [] () [] ? ? ? = ? ? 3 1 12 10 5 . 3 10 141 1 s freq s f r freq
data sheet 12 rev. 1.0, 2010-10-25 TLE8386-2EL oscillator and synchronization 6.2 electrical characteristics v in = 6v to 40v; t j = -40 c to +150 c, all voltages with respect to ground, pos itive current flowing into pin; (unless otherwise specified) pos. parameter symbol limit values unit conditions min. typ. max. oscillator: 6.2.1 oscillator frequency f freq 250 300 350 khz r freq = 20k ? 6.2.2 oscillator frequency adjustment range f freq 100 ? 700 khz 17% internal tolerance + external resistor tolerance 6.2.3 freq supply current i freq ??-700a v freq = 0 v synchronization 6.2.4 sync input internal pull- down r sync 150 250 350 k ? v sync = 5v 6.2.5 maximum duty cycle d max,fixed 90 93 95 % fixed frequency mode 6.2.6 maximum duty cycle d max,sync 88 ? ? % synchronization mode, ratio between synchronization and internal frequency (set by resistor) is 0.8 to 1.2 6.2.7 synchronization frequency capture range f sync 250 ? 700 khz ratio between synchronization and internal frequency (set by resistor) is 0.8 to 1.2 6.2.8 synchronization signal duty cycle t d_sync 20 80 % 6.2.9 synchronization signal high logic level valid v sync,h 3.0??v 1) 1) synchronization of external swo on signal to falling edge 6.2.10 synchronization signal low logic level valid v sync,l ??0.8v 1)
TLE8386-2EL oscillator and synchronization data sheet 13 rev. 1.0, 2010-10-25 typical performance characteristics of oscillator switching frequency f sw versus frequency select resistor to gnd r freq oscillator_ffreq_vs_rfreq.vsd 0 100 200 300 400 500 0 1020304050607080 r freq [kohm] f freq [khz] t j = 25 c 600 700
data sheet 14 rev. 1.0, 2010-10-25 TLE8386-2EL enable function 7 enable function 7.1 description the enable function powers on or off the device. a valid l ogic low signal on enable pin en powers off the device and current consumption is less than 2 a. a valid logic hi gh enable signal on enable pin en powers on the device. the enable startup time t en,start is the time between the enable signal is recognized as valid and the device starts to switch. during this period of time the internal supplies, bandgap are initalized and reach their nominal values. the tle8386-2 will start to switch after the nominal values are reached. figure 6 timing diagram enable 9 (1 9 (121 9 ,9&& 9 ,9&&21 9 6:2 9 (12)) w w w 3rzhu2ii ,t ? $ 1rupdo 6:22q (1b7lplqjvyj 3rzhu2q w (167$57 ? ?v
TLE8386-2EL enable function data sheet 15 rev. 1.0, 2010-10-25 7.2 electrical characteristics v in = 6v to 40v; t j = -40 c to +150 c, all voltages with respect to ground, pos itive current flowing into pin; (unless otherwise specified) pos. parameter symbol limit values unit conditions min. typ. max. enable input: 7.2.1 enable turn on threshold v en,on 3.0 ? v ? 7.2.2 enable turn off threshold v en,off ??0.8v? 7.2.3 enable hysteresis v en,hys 50 200 400 mv ? 7.2.4 enable high input current i en,h ??30a v en = 16.0 v 7.2.5 enable low input current i en,l ?0.11a v en = 0.5 v 7.2.6 enable startup time 1) 1) not subject to production test, specified by design. t en,start 100 ? ? s ? current consumption 7.2.7 current consumption, shutdown mode i q_off ??2a v en = 0.8 v; t j 105c; v in = 16v 7.2.8 current consumption, active mode 2) 2) dependency on switching frequency and gate charge of boost. i q_on ??7ma v en 4.75 v; i bo = 0 ma; v in = 16v v swo = 0% duty
data sheet 16 rev. 1.0, 2010-10-25 TLE8386-2EL linear regulator 8 linear regulator 8.1 description the internal linear voltage regulator supplies the internal gate drivers with a typical voltage of 5 v and current up to 50 ma. an external output capacito r with low esr is required on pin ivcc for stability and buffering transient load currents. during normal operatio n the external boost mosfet switch will draw transient currents from the linear regulator and its output capacitor. proper sizing of the output capacitor must be considered to supply sufficient peak current to the gate of the external mosfet switch. please refer to application section for recommendations on sizing the output capacitor. an integr ated power-on reset circuit monitors the linear regulator output voltage and resets the device in case the output voltage falls below the power-on reset threshold. the power-on reset helps protect the external switches from excessive power dissipation by ensuring the gate drive voltage is sufficient to enhance the gate of an external logic level n-channel mosfet. ivcc stays at around 300 mv when enable signal is off. no external circuit should be connected to ivcc figure 7 voltage regulator block diagram and simplified application circuit 8.2 electrical characteristics v in = 6v to 40v; t j = -40 c to +150 c, all voltages with respect to ground, pos itive current flowing into pin; (unless otherwise specified) pos. parameter symbol limit values unit conditions min. typ. max. 8.2.1 output voltage v ivcc 4.6 5 5.4 v 6 v v in 45 v 0.1 ma i ivcc 50 ma 8.2.2 output current limitation i lim 51 110 ma v in = 13.5 v v ivcc = 4.5v 8.2.3 drop out voltage v dr 1000 mv i ivcc = 50ma 1) 1) measured when the output voltage v cc has dropped 100 mv from its nominal value. 8.2.4 output capacitor c ivcc 0.47 3 f 2) 2) minimum value given is needed for regulator stability; a pplication might need higher capacitance than the minimum. 8.2.5 output capacitor esr r ivcc,esr 0.5 ? f = 10khz 8.2.6 undervoltage reset headroom v ivcc,hdrm 100??mv v ivcc decreasing v ivcc - v ivcc,rth,d 8.2.7 undervoltage reset threshold v ivcc,rth,d 4.0??v v ivcc decreasing 8.2.8 undervoltage reset threshold v ivcc,rth,i ??4.5v v ivcc increasing (1 ,1 ,9&& /lqhdu5hjxodwru /lq5hjb%ofn'ldjvyj *dwh 'ulyhu
TLE8386-2EL protection and diagnostic functions data sheet 17 rev. 1.0, 2010-10-25 9 protection and diag nostic functions 9.1 description the TLE8386-2EL has integrated circuits to prot ect against output over voltage, open feedback and overtemperature faults. during an ov ervoltage the gate driver outputs sw o will turn off. in the event of an overtemperature condition the integrated thermal shutdown function turns off the gate drivers and internal linear voltage regulator. if the connection from pin fb to the ou tput voltage resistor divider should be lost, an internal current source connect ed to pin fb will draw the volt age above this limit and shut the external mosfet off. the typical junction shutdown te mperature is 175c. after cooling down t he ic will automatically restart operation. thermal shutdown is an integrated prot ection function designed to prevent immediate ic destruction and is not intended for continuous use in normal operation. 9.2 electrical characteristics note: integrated protection functions are designed to prevent ic destruction under fault conditions described in the data sheet. fault conditions are considered as ?outside? normal operating range. protection functions are not designed for continuous repetitive operation. v in = 6v to 40v; t j = -40 c to +150 c, all voltages with respect to ground, pos itive current flowing into pin; (unless otherwise specified) pos. parameter symbol limit values unit conditions min. typ. max. temperature protection: 9.2.1 over temperature shutdown t j,sd 160 175 190 c ? 9.2.2 over temperature shutdown hystereses t j,sd,hyst ?15?c? overvoltage protection: 9.2.3 output over voltage feedback threshold increasing v ovfb,th 8 10 12 % 10% higher of regulated voltage 9.2.4 output over voltage feedback hysteresis v ovfb,hys 5 % output voltage decreasing 9.2.5 over voltage reaction time t ovprr 2 ? 10 s output voltage decreasing
data sheet 18 rev. 1.0, 2010-10-25 TLE8386-2EL application information 10 application information note: the following information is given as a hint for the implementation of the device only and shall not be regarded as a description or warranty of a certain functionality, condition or quality of the device. 10.1 boost converter application circuit figure 8 boost converter application circuit figure 9 boost application circuit bill of material note: this is a simplified example of an application circuit. the function must be verified in the real application. 9 %2 ,1 6<1& (1 &203 )5(4 667 *1' 6:2 6:&6 6*1' )% ,9&& 7/((/ 5 &6 5 )%/ 5 )%+ & 287 / %2267 / ,1387 & ,1 & ,1 9 ,1 ' %2267 & 667 & &203 5 &203 5 )5(4 & ,9&& 5 32/ ' 32/ $ss'ldj%rrvw & ,1 xqg/ ,1387 uhfrpphqghgiru vxssuhvvlrqri(0( & &203 l boost reference designator d boost part number manufacturer c out r cs r fb h c comp r comp c ivcc r freq ic 1 vishay coilcraft mss1278t-104ml_ eevfk 1k101q panasonic value 100 uh 100 uf, 80v -- type diode capacitor capacitor capacitor ic inductor resistor resistor resistor resistor panasonic 100 uf, 6.3v eefhd0j101r infineon tle8386 -2el -- 11 k ? , 1% panasonic erj3ekf 1102v 20 k ? , 1% panasonic erj3ekf 2002v panasonic ss3h10 schottky , 3 a, 100 v r 10 nf -- panasonic 10 k ? erj3ekf 1002v quantity 1 1 1 1 1 1 1 1 1 1 c in1 eeefk 1h101gp panasonic 100 uf, 50v capacitor 1 50 m ? , 1% erjb1cfr05u r fbl resistor 1 k ? , 1% panasonic erj3ekf 1001v 1 c sst -- capacitor 4,7 nf -- 1
TLE8386-2EL application information data sheet 19 rev. 1.0, 2010-10-25 10.1.1 principle: the TLE8386-2EL can be configured as a boost converter, where the desired output voltage v bo is always higher than the input voltage v in . a boost convertor is not short-circui t protected. if the output voltage v bo is shorted, the output current will only be lim ited by the input voltage v in capability. a typical boost converter application is shown in figure 8 , the elements and abbreviations and their meanings are: ?l boost = boost inductor ?l input = input filter inductor, recommended to reduce electromagnetic emissions ?c in1 = input filter capacitor ?c in2 = additional input filter capacitor, recomme nded to reduce electromagnetic emissions ?c out = output filter capacitor ?d boost = output diode ?v in = input voltage ?v inmin = minimum input voltage ?v bo = boost output voltage ?r cs = current sense resistor ?r fbh = boost output voltage resistor divider, highside resistor ?r fbl = boost output voltage resistor divider, lowside resistor ?r comp , c comp = compensation network elements ?r freq = frequency setting resistor ?c sst = softstart setting capacitor ?c ivcc = capacitor for internal ldo ? d = duty cycle ?d max = maximum duty cycle ?f freq = switching frequency ?i in = input current ?i bo = output current ?i bomax = maximum output current the ratio between input voltage v in and output voltage v bo in continuos conduction mode (ccm) is: in discontinous conduction mode (dcm) the conversion rati o at a fixed frequency is higher, the switching current increases and efficiency is redu ced. the maximum duty cycle d max occurs for minimum input voltage v inmin . v bo v in ---------- - 1 1d ? ------------ - d ? v bo v in ? v bo --------------- ----------- ==
data sheet 20 rev. 1.0, 2010-10-25 TLE8386-2EL application information 10.1.2 component selection: power mosfet selection: the important parameters for the choice of the power mosfet are: ? drain-source voltage rating v ds : the power mosfet will see the full output voltage v bo plus the output diode (d boost ) forward voltage. during its o ff-time additional ringing acro ss drain-to-source will occur. ? on-resistance r dson for efficiency reasons and power dissipation ? maximum drain current i dmax ? gate-to-source charge and gate-to-drain charge ? thermal resistance it is recommended to choose a power mosfet with a drain-source voltage rating v ds of at least 10 v higher than the output voltage v bo . the power dissipation p lossfet in the power mosfet can be calculated using the following formula: ?c rss = reverse transfer capacitance, please refer to power mosfet data sheet ?i boostmax = maximum average current through the boost inductor l boost . the first term in the equation above gives the conductio n losses in the power mosfet, the second term the switching losses. to opti mize the efficiency, r dson and c rss should be minimized. p lossfet i boostmax 2 r dson 2v bo 2 i boostmax c rss f freq 1a -------------- + =
TLE8386-2EL application information data sheet 21 rev. 1.0, 2010-10-25 current sense resistor r cs selection: for control and protection, the TLE8386-2EL measures the power mosf et current by a current sense resistor r cs , which is located between the power mosfet source a nd ground. for proper function it is very important: ? to locate the current sense resistor as close as possible to the TLE8386-2EL ? to use short (low resistive and low inductive) tr aces between the power mosfet source and ground. ? to use short (low resistive and low inductive) traces between the current sense resistor r cs highside and lowside and the pins swcs and sgnd (it is not reco mmended to use pin gnd instead of pin sgnd for power mosfet current measurement). ? the value of r cs should be selected to make sure that the maximum peak sense voltage v sensepeak during steady state normal operation will be lowe r than the adjusted curr ent limit threshold (curre nt limit function!). it is recommended to give a 20% margin. ? the value of r cs should be selected to make sure that the power mosfet maximum drain current i dmax will not be exceeded (please refer to power mosfet data sheet). the figure below shows the voltage waveform over the current sense resistor r cs during a switching cycle: figure 10 sense voltage v sense waveform during a switching cycle ?v sensemax = maximum average sense voltage at maximum output current i bo measured during on-time. ?v sensepeak = maximum peak sense voltage at maximum output current i bo at end of on-time. ? ? v sense = ripple voltage across r cs (switch ripple current) during on-time, represents the peak-to-peak ripple current in the boost inductor l boost . the maximum (peak-to-peak) switch current ripple percentage (will be needed for further calculations of inductor values) can be calculated considering the 20% margin by following equation: ?v swcs = switch peak over current threshold ? is recommended to fall in the range between 0.2 to 0.6 (p lease refer to calculations in the following chapters) t on-time v sense v sensemax v sensepeak ? v sense switching cycle ? v sense 080 , v swcs 050 , ? v sense ? -------------------- --------------------- ---------------------- ----------------- - =
data sheet 22 rev. 1.0, 2010-10-25 TLE8386-2EL application information the value of the sense resistor r cs can be calculated as follows: ?i boostpeak = peak current through the boost inductor l boost (will be calculated at bo ost inductor selection) boost inductor l boost selection: the important parameters for selecting the boost inductor are: ? inductor l boost ? maximum rms current rating i boostrms for thermal design ? saturation current threshold i boostsat the maximum average inductor current is: the ripple current through the boost inductor is: the peak current through the boost inductor is: (the peak current trough the boost inductor must be smaller than the saturation current threshold!) the rms current through the boost inductor is: the boost inductor value l boost can be calculated by the following equation: r cs 080 , v swcs i boostpeak ------------------ ---------------- = i boostmax i bomax 1 1d max ? ------------- ----------- = ? i boost i boostmax i bomax 1 1d max ? -------------- ---------- == i boostpeak i boostmax 1 2 -- - + ?? ?? i boostsat < = i boostrms i boostmax 1 2 12 ----- - + = l boost v inmin ? i boost f freq ----------------- -------------- ----------- d max =
TLE8386-2EL application information data sheet 23 rev. 1.0, 2010-10-25 in fixed frequency mode an external resistor determines the switching frequency. the minimum boost inductor for fixed frequency is given by the formula below: ?l boostmin = minimum inductance required (minimum value of l boost ) following the previous equations the us er should choose the boost inductor having sufficient saturation and rms current ratings. the boost inductor value influences the current ripple ? i boost : ? a larger boost inductor value decreases the current ripple ? i boost , but reduces also t he current loop gain. ? a lower boost inductor value increases the current ripple ? i boost , but provides faster transient response. a lower boost induct or value also results in higher input current ripple and greater core losses. output diode d boost selection: guidelines to choose the diode: ? fast switching diode ? low forward drop ? low reverse leakage current ? it is recommended to choose the repetitive reverse voltage rating v rrm (please refer to diode data sheet) at least 10v higher than the boost converter output voltage v bo . the average forward current in normal operation is equal to the boost converter output current i bo and the peak current through the diode i dpeak (occurs in off-time of the power mosfet) is: the power dissipation p lossdio in the output diode d boost is: ?v d = forward drop voltage of diode d boost (please refer to diode data sheet). l boostmin v bo v [] r cs ? [] 106 3 ? 10 v [] f freq hz [] --------------- ------------------ ----------------- --------------- - i dpeak i = boostpeak i boostmax 1 2 -- - + ?? ?? = p lossdio i bomax v d =
data sheet 24 rev. 1.0, 2010-10-25 TLE8386-2EL application information output filter capacitor c out selection: choosing the correct output capacitor for gi ven output ripple voltage, the influence of ? esr = equivalent series resistance, ? esl = equivalent series inductance and ? bulk capacitance have to be considered. the effects of these three parameters is additional ringing on the output voltage v bo . the voltage ripple at the output voltage v bo depends on: ? ? v esr : in percent, related to the esr of the output capacitor(s) ? ? v cout : in percent, related to the bulk ca pacitance of the ou tput capacitor(s) ? to receive the total voltage ripple, the influence of ? v esr and ? v cout must be counted together. the output capacitor can be calculated using the followin g equation (which contains the influence of the bulk capacitance on the output voltage ripple): influence of the capacitor esr on the output voltage ripple: the output capacitor experiences high rms ripple currents, the rms ripple current rating can be determined using the following formula: ?i coutrms = rms ripple current rating at switching frequency i freq . to meet the esr requirements often multiple capacitor s are paralleled. typically, once the esr requirement is met, the output capacitance is adequate for filtering and has the required rms current rating. additional ceramic capacitors are commonly used to reduce the effects of parasitic inductance to reduce high frequent switching noise on the boost converter output. c out i bomax ? v cout v out f freq ------------------- ---------------------- --------------------- - esr cout ? v esr i dpeak ----------------- - i coutrms i bomax d max 1d max ? ------------- -----------
TLE8386-2EL application information data sheet 25 rev. 1.0, 2010-10-25 input filter capacitor c in1 selection: the input filter capacitor c in1 has to compensate the alternate current c ontent or current ripple on the input line, recommended values are from 10f to 100f, to improve the suppression of high frequent distortions a parallel ceramic capacitor might be necessary. the rms input capacitor ripple current i in1rms for a boost converter is: compensation network elements r comp , c comp selection: to compensate the feedback loop of the TLE8386-2EL a series network of r comp , c comp is usually connected from pin comp to ground. for most applications the capacitor c comp should be in the range of 470pf to 22nf, and the resistor r comp should be in the range of 5k ? to 100k ? . an additional capacitor c comp2 might be usefull to improve stability. c comp and c comp2 should be a low esr ceramic capacitors. a practical approach to determine the compensation network is to start with the application circuit as shown in the data sheet and tune the comp ensation network to optimize the performance. stability of the loop s hould then be checked under all operating conditions, including output current and variations and over the entire temperature range. output boost voltage v bo adjustment by determining the output voltage resistor divider r fbh , r fbl : ?v fb = feedback reference voltage (v bo is always higher than v in during operation of the boost converter) additional input filter inductor l input and capacitor c in2 selection: ?f filter = resonance frequency of the additional input filter the input filter inductor l input should have a saturation current value equal to l boost , capacitor c in2 should be a low esr ceramic capacitor. both elements are forming a low pass filter to suppress conducted disturbances on the v in line. to obtain an optimum suppression, the input filter resonance frequency f filter should be at least ten times lower than the switching frequency f freq : the use of an additional input filter is depend ing on the requirements of the application. for selection of r freq , c sst and c ivcc please refer to previous chapters. i in1rms 030 , ? i boost = v bo v fb r fbh r fbl + r fbl ------------------ -------------- = f freq 10 f filter 1 2 l input c in2 --------------- ------------------ --------------- = ?? ?? ?? >
data sheet 26 rev. 1.0, 2010-10-25 TLE8386-2EL application information 10.2 further information on TLE8386-2EL 10.2.1 general layout recommendations introduction: a boost converter is a potential source of electromagne tic disturbances which may affe ct the environment as well as the device itself and cause sporadic malfunctio n up to damages depending on the amount of noise. in principal we may consider the following basic effects: ? radiated magnetic fields caused by circular currents, occurring mostly with the switching frequency and their harmonics ? radiated electric fields, often c aused by (volt age) oscillations ? conducted disturba nces (voltage spikes or oscillations) on the lines, mostly in put and output lines. radiated magnetic fields: radiated magnetic fields are caused by circular currents occurring in so called ?current windows?. these circular currents are alternating currents which are driven by th e switching transistor. the alternating current in these windows are driving magnetic fields. the amount of magnetic emissions is mostly depending on the amplitude of the alternating current and the size of the so-called ?wi ndow? (this is the area, whic h is defined by the circular current paths. we can divide into two windows: ? the input current ?window? (path consisting of c in1 , l boost and the power mosfet): only the alternate content of the input current i in is considered. ? the output current ?window?: (path consisting of the power mosfet, d boost and c out ): output current ripple ? i the area of these ?windows? has to be kept as small as possible, with the relating elements placed next to each others. it is highly recommended to use a ground plane as a single layer which covers the complete regulator area with all components shown in this figure. all connections to ground shall be as short as possible radiated electric fields: radiated electric fields are caused by voltage osc illations occurring due to st ray inductances and stray capacitances at the connection be tween power mosfet, output diode d boost and output capacitor c out . they are also of course influenced by the commutation of the current from the power mosfet to the output diode d boost . their frequencies might be between 10 and 100 mhz. therefore it is recommended to use a fast schottky diode and to keep the connections in this area as low in ductive as possible. this can be achieved by using short and broad connections and to arrange the related parts as close as possible. following the recommendation of using a ground layer these low indu ctive connections will fo rm together with th e ground layer sm all capacitances which are desirable to damp the slope of these oscillation s. the oscillations use connec tions or wires as antennas, this effect can also be minimized by the short and broad connections.
TLE8386-2EL application information data sheet 27 rev. 1.0, 2010-10-25 conducted disturbances: conducted disturbances are vo ltage spikes or voltage osc illations, occurring permanent ly or by occasion mostly on the input or output connections. comparable to th e radiated electric fields they are caused by voltage oscillations occurring due to stray in ductances and stray capaci tances at the connection between power mosfet, output diode d boost and output capacitor c out . their frequencies might be between 10 and 100 mhz. th ey are super positioned to the input and output voltage and might thus disturb other co mponents of the application. the countermeasures against conduc ted disturbances are similar to the radiated electric fields: ? it is recommended to use short an thick connecti ons between the single parts of the converter ? all parts shall be mounted close together ? additional filter capacitors (ceramic , with low esr) in parallel to the output and input capacitor and as close as possible to the switching parts. input and load current must be forced to pass th ese devices, do not connect them via thin lines. recommended values from 10nf to 220nf ? for the input filter a so called ?p ? ? filter for maximum suppression might be necessary, which requires additional capacitors on the input 10.2.2 additional information ? please contact us for information regarding the pin fmea. ? and for existing application notes with more detailed information about the possibilities of this device ? for further information you may contact http://www.infineon.com/
TLE8386-2EL package outlines data sheet 29 rev. 1.0, 2010-10-25 11 package outlines figure 11 pg-ssop-14 green product (rohs compliant) to meet the world-wide customer requirements for environmentally friendly products and to be compliant with government regulations the device is available as a green product. green products are rohs-compliant (i.e pb-free finish on leads and suitable for pb-free soldering according to ipc/jedec j-std-020). pg-ssop-14-1,-2,-3-po v02 1 7 14 8 14 17 8 14x 0.25 ?.05 2) m 0.15 d c a-b 0.65 c stand off 0 ... 0.1 (1.45) 1.7 max. 0.08 c a b 4.9 ?.1 1) a-b c 0.1 2x 1) does not include plastic or metal protrusion of 0.15 max. per side 2) does not include dambar protrusion bottom view ?.2 3 ?.2 2.65 0.2 ?.2 d 6 m d 8x 0.64 ?.25 3.9 ?.1 1) 0.35 x 45? 0.1 cd +0.06 0.19 8 ? max. index marking exposed diepad for further package information, please visit our website: http://www.infineon.com/packages . dimensions in mm
data sheet 30 rev. 1.0, 2010-10-25 TLE8386-2EL revision history 12 revision history 1.0 revision date changes 1.0 2010-10-25 data sheet
edition 2010-10-25 published by infineon technologies ag 81726 munich, germany ? 2010 infineon technologies ag all rights reserved. legal disclaimer the information given in this docu ment shall in no event be regarded as a guarantee of conditions or characteristics. with respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, infine on technologies hereby disclaims any and all warranties and liabilities of any kind, including witho ut limitation, warranties of non-infrin gement of intellectua l property rights of any third party. information for further information on technology, delivery terms and conditions and prices, please contact the nearest infineon technologies office ( www.infineon.com ). warnings due to technical requirements, components may contain dangerous substances. for information on the types in question, please contact the nearest infineon technologies office. infineon technologies compon ents may be used in life-su pport devices or systems only with the express written approval of infineon technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safe ty or effectiveness of that de vice or system. life support devices or systems are intended to be implanted in the hu man body or to support an d/or maintain and sustain and/or protect human life. if they fail, it is reasonable to assume that the health of the user or other persons may be endangered.

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